Modeling of the atomic processes in the laser-plasma EUV sources

A. Sasaki; K. Nishihara; F. Koike; K. Kagawa; H. Tanuma; A. Sunahara; K. Gamada; T. Nishikawa

doi:10.1117/12.602029

6 May 2005 Modeling of the atomic processes in the laser-plasma EUV sources

A. Sasaki, K. Nishihara, F. Koike, K. Kagawa, H. Tanuma, A. Sunahara, K. Gamada, T. Nishikawa

Author Affiliations +

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.602029
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

We develop an atomic model for the Xe and Sn plasmas based on the calculated atomic data for the theoretical investigatiion of the laser plasma EUV source. The wavelength and intensity of the emission lines of Xe^8-16+ and Sn^4-12+ are investigated, and the dominant charge state and emission channels for the radiation at 13.5 nm are identified. The emissivity and opacity at the collisional radiative equilibrium (CRE) are calculated, and their spectral properties are investigated with respect to the accuracy of the wavelength of major emission lines and the effect of satellite lines.

Citation Download Citation

A. Sasaki, K. Nishihara, F. Koike, K. Kagawa, H. Tanuma, A. Sunahara, K. Gamada, and T. Nishikawa "Modeling of the atomic processes in the laser-plasma EUV sources", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.602029

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