Application of critical shape metrology to 90nm process

Dmitry V. Gorelikov; John Haywood; Colin Yates

doi:10.1117/12.599894

10 May 2005 Application of critical shape metrology to 90nm process

Dmitry V. Gorelikov, John Haywood, Colin Yates

Author Affiliations +

Proceedings Volume 5752, Metrology, Inspection, and Process Control for Microlithography XIX; (2005) https://doi.org/10.1117/12.599894
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Critical Shape Metrology (CSM), a Monte-Carlo simulation-based technique that extracts feature shape information from top-down CD-SEM images, is applied to study advanced process steps of etched polysilicon layers. True bottom CDs and sidewall angles are among the parameters obtained during real-time wafer inspection. Comparison is made to FIB cross-sections obtained independently from select test sites.

Citation Download Citation

Dmitry V. Gorelikov, John Haywood, and Colin Yates "Application of critical shape metrology to 90nm process", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.599894

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