Robust lithography process control methodology anticipating CD after etching using scatterometry below 65nm node

Tokihisa Kaneguchi; Atsushi Someya; Hiroichi Kawahira

doi:10.1117/12.598574

12 May 2005 Robust lithography process control methodology anticipating CD after etching using scatterometry below 65nm node

Tokihisa Kaneguchi, Atsushi Someya, Hiroichi Kawahira

Author Affiliations +

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.598574
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

As the pattern feature-size of devices shrinks down to below 65 nm, it becomes more important to establish methods to control lithographic critical dimension (CD) that enable better controllability of CD after etching. This paper introduces new methods to control and optimize lithography process by precisely anticipating CD after etching. Before establishing the methods, relationships between CD after resist development and after etching were measured by using a scatterometry (iODP100 by Tokyo Electron Ltd.). As CD and side wall angle (SWA) of resist profiles can be controlled independently by adjusting exposure dose and focus offset in lithography process, it is possible to control the CD after etching by adjusting them. Moreover, since current lithography and etching process are designed based on CD budgets that have several elements such as intra-shot, intra-wafer, wafer-to-wafer and lot-to-lot CD uniformities, it is preferable to control total CD errors after etching by adjusting the elements in lithography process in anticipation of CD after etching. In addition, it is also important to control CD for various patterns, such as isolated, dense, and other patterns in various design layouts. As current optical proximity effect correction (OPC) techniques can not fully eliminate pattern density effects induced by etching, controlling CD by adjusting lithography conditions to compensate such effects will be one of the feasible solutions.

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Tokihisa Kaneguchi, Atsushi Someya, and Hiroichi Kawahira "Robust lithography process control methodology anticipating CD after etching using scatterometry below 65nm node", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.598574

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KEYWORDS

Critical dimension metrology

Etching

Lithography

Scatterometry

Photomasks

Photoresist processing

Process control

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