Growth And Applications Of Heteroepitaxial Narrow Gap IV-VI Infrared Detectors On Silicon

H. Zogg; W. Vogt; H. Melchior

doi:10.1117/12.951217

9 July 1986 Growth And Applications Of Heteroepitaxial Narrow Gap IV-VI Infrared Detectors On Silicon

H. Zogg, W. Vogt, H. Melchior

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951217
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

High quality epitaxial layers of PbTe, PbSe, and (Pb,Sn)Se have been grown onto Si wafers. Epitaxy was achieved using graded (Ca,Ba)F2 buffer layers grown by MBE. The buffer layer serves for lattice match. It consists of CaF2 at the Si interface (mismatch 0.6%) and changes to BaF2 with a 14% increased lattice constant for match at the interface to the IV-VI lead-salt narrow gap semiconductors. Smooth, crackfree surfaces have been obtained. Mobilities in the IV-VI's reach bulk values over the whole 300K-10K range. Near BLIP-limited photovoltaic IR-detectors are demonstrated in nonoptimized layers. The results open up the possibility to combine large monolithic linear or area focal plane arrays (FPA) of intrinsic IR-detectors with signal processing in the Si wafer. - Epitaxial (Ca,Sr,Ba)F2 may find further applications as graded buffers to connect different non lattice matched semi-conductor layers with lattice constants between about 0.54 and 0.62nm.

Citation Download Citation

H. Zogg, W. Vogt, and H. Melchior "Growth And Applications Of Heteroepitaxial Narrow Gap IV-VI Infrared Detectors On Silicon", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951217

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