Paper
6 December 2006 Investigation of ion-implanted layers by x-ray reflectometry method
A. G. Touryanski, N. N. Gerasimenko, S. A. Aprelov, I. V. Pirshin, A. I. Poprygo, V. M. Senkov
Author Affiliations +
Proceedings Volume 5943, X-ray and Neutron Capillary Optics II; 59430G (2006) https://doi.org/10.1117/12.637912
Event: X-ray and Neutron Capillary Optics II, 2004, Zvenigorod, Russian Federation
Abstract
Investigation of ion-implanted structures by means of X-ray reflectometry was carried out. For this purpose the new methods of reflectivity measurements and the experimental data treatment were developed: double beam method of X-ray reflectometry and the subtraction of trend. The depths or widths of implanted layers, its average density were determined.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. G. Touryanski, N. N. Gerasimenko, S. A. Aprelov, I. V. Pirshin, A. I. Poprygo, and V. M. Senkov "Investigation of ion-implanted layers by x-ray reflectometry method", Proc. SPIE 5943, X-ray and Neutron Capillary Optics II, 59430G (6 December 2006); https://doi.org/10.1117/12.637912
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KEYWORDS
Reflectivity

X-rays

Reflectometry

Silicon

Ions

Argon

Diamond

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