Wafer-fused mid-infrared optical up-converter based on MOCVD grown InSb

D. Ban; H. Luo; H. C. Liu; Z. R. Wasilewski; M. Buchanan; Y. Paltiel; A. Raizman; A. Sher

doi:10.1117/12.628587

12 October 2005 Wafer-fused mid-infrared optical up-converter based on MOCVD grown InSb

D. Ban, H. Luo, H. C. Liu, Z. R. Wasilewski, M. Buchanan, Y. Paltiel, A. Raizman, A. Sher

Proceedings Volume 5970, Photonic Applications in Devices and Communication Systems; 59700C (2005) https://doi.org/10.1117/12.628587
Event: Photonics North, 2005, Toronto, Canada

Abstract

InSb has been intensively studied in decades and widely used for fabricating high-performance devices because of its good chemical stability, low effective mass, high electron and hole mobility, and narrow band gap. The most important device applications for InSb are in thermal image sensing in the mid-infrared (3-5 μm) spectral range. The industry standard for fabricating InSb-based focal plane arrays for thermal imaging is based on indium bump technology to interconnect the InSb array to a Si-based readout integrated circuit chip. This hybridization is a "one-piece-at-a-time" process and thus time-consuming and costly. An alternative approach is to employ a device that up-converts mid-infrared light to a wavelength below 1 μm, which can then efficiently be detected by Si charged coupled devices. We reported herein such a mid-infrared optical up-converter based on InSb using wafer fusion technology. The up-conversion device consists of an InSb p⁺nn⁺ photodiode and a GaAs/AlGaAs LED, which were grown separately and wafer-bonded together. Experimental results demonstrated mid-infrared to 0.84 μm up-conversion operation at 77K. The measured LED external efficiency and photodiode responsivity show that an external up-conversion efficiency of 0.093 W/W was obtained. Effects of electrical gain and photon recycling inside this integrated device are discussed.

Citation Download Citation

D. Ban, H. Luo, H. C. Liu, Z. R. Wasilewski, M. Buchanan, Y. Paltiel, A. Raizman, and A. Sher "Wafer-fused mid-infrared optical up-converter based on MOCVD grown InSb", Proc. SPIE 5970, Photonic Applications in Devices and Communication Systems, 59700C (12 October 2005); https://doi.org/10.1117/12.628587

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available