Inspection and planarization of programmed pit masks for EUV lithography

S.-C. Seo; S.-I. Han; Y. Ikuta; P. Kearney; A. Ma; D. Krick

doi:10.1117/12.633447

8 November 2005 Inspection and planarization of programmed pit masks for EUV lithography

S.-C. Seo, S.-I. Han, Y. Ikuta, P. Kearney, A. Ma, D. Krick

Author Affiliations +

Proceedings Volume 5992, 25th Annual BACUS Symposium on Photomask Technology; 59923Y (2005) https://doi.org/10.1117/12.633447
Event: SPIE Photomask Technology, 2005, Monterey, California, United States

Abstract

Extreme Ultraviolet lithography requires defect free multilayer-coated masks. The defects in multilayer-coated masks originate from several sources including: the incoming substrate, pre-multilayer deposition cleaning, multilayer deposition, and handling processes. A previous study showed the majority of currently detectable defects are contributed by the incoming substrate. The purpose of this study is to understand the ability of multilayer deposition to modulate the size and shape of substrate pits, and to, ultimately, enable us to determine if a defect of a particular size and shape is tolerable, and will result in a non-printable pit after coating. In order to execute a systematic study, pits with controlled sizes and shapes were required. Programmed pit arrays were generated using Focused Ion Beam (FIB). The arrays were designed to contain pits of various widths and depths. The physical size of these pits was measured using Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) both before and after multilayer deposition. These programmed pit arrays were also used to probe the sensitivity of a state of the art Lasertec M1350 defect inspection system to defect size and shape both before and after coating. Finally, the results were compared to those from natural pits. The programmed defects generated in this study will also enable further development of defect mitigation by other planarization techniques as well as improving inspection recipes.

Citation Download Citation

S.-C. Seo, S.-I. Han, Y. Ikuta, P. Kearney, A. Ma, and D. Krick "Inspection and planarization of programmed pit masks for EUV lithography", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923Y (8 November 2005); https://doi.org/10.1117/12.633447

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Multilayers

Inspection

Quartz

Atomic force microscopy

Photomasks

Scanning electron microscopy

Extreme ultraviolet lithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years