High-gain InGaAsN materials

C. S. Peng; J. Konttinen; T. Jouhti; M. Pessa

doi:10.1117/12.636510

5 December 2005 High-gain InGaAsN materials

C. S. Peng, J. Konttinen, T. Jouhti, M. Pessa

Author Affiliations +

Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60200H (2005) https://doi.org/10.1117/12.636510
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

Beryllium was incorporated in InGaAsN single quantum well (SQW). Comparing with the conventional InGaAsN SQW structures, photoluminescence (PL) investigations show a significant improvement. After 3000 sec of annealing at 700 °C, the PL peak area is about 20 times higher while the wavelength keeps 25 nm longer. After 800 sec of this annealing, the PL quenched slowly for the conventional structures because of the strain relaxation, while the PL of the new structures increased rapidly and show no saturation after 3000 sec of annealing. Laser processing based on the new InGaAsN structures resulted in one half of the threshold current density compare to conventional InGaAsN.

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C. S. Peng, J. Konttinen, T. Jouhti, and M. Pessa "High-gain InGaAsN materials", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200H (5 December 2005); https://doi.org/10.1117/12.636510

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