Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells

Z. Sun; Z. Y. Xu; X. D. Yang; B. Q. Sun; Y. Ji; S. Y. Zhang; H. Q. Ni; Z. C. Niu

doi:10.1117/12.640380

15 February 2006 Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells

Z. Sun, Z. Y. Xu, X. D. Yang, B. Q. Sun, Y. Ji, S. Y. Zhang, H. Q. Ni, Z. C. Niu

Proceedings Volume 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X; 61180Z (2006) https://doi.org/10.1117/12.640380
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

The nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells.

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Z. Sun, Z. Y. Xu, X. D. Yang, B. Q. Sun, Y. Ji, S. Y. Zhang, H. Q. Ni, and Z. C. Niu "Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180Z (15 February 2006); https://doi.org/10.1117/12.640380

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