Radiation thermometry of semitransparent silicon wafers near room temperature

Tohru Iuchi; Yoshikazu Ikeda

doi:10.1117/12.661425

18 April 2006 Radiation thermometry of semitransparent silicon wafers near room temperature

Tohru Iuchi, Yoshikazu Ikeda

Proceedings Volume 6205, Thermosense XXVIII; 62050A (2006) https://doi.org/10.1117/12.661425
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

Silicon wafers become semitransparent at room temperature and at wavelengths more than 1.1 μm. Silicon wafers with an oxide film layer are also semi-transparent because the extinction coefficient of the film optical constants is negligible at visible and infrared wavelengths. We experimentally studied optical properties such as emissivity, reflectivity and transmissivity of silicon wafers with and without oxide films to devise new radiation thermometry that is applicable to semi-transparent silicon wafers near room temperature. The proposed radiation thermometry which is constituted from two blackbodies and p-polarized optical components showed the accuracy of ± 1 K at the temperature range from 313 K to 343 K using a radiometer with an InSb sensor sensitive at a wavelength of 4.7 ± 0.1 μm for silicon wafers with low resistivity. It turned out that radiation thermometry near room temperature for silicon wafers with resistivity over 1 Ωcm is very difficult because their emissivities are extremely small.

Citation Download Citation

Tohru Iuchi and Yoshikazu Ikeda "Radiation thermometry of semitransparent silicon wafers near room temperature", Proc. SPIE 6205, Thermosense XXVIII, 62050A (18 April 2006); https://doi.org/10.1117/12.661425

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