Advanced processes for photomask damage-free cleaning and photoresist removal

James S. Papanu; Roman Gouk; Han-Wen Chen; Pieter Boelen; Phillip Peters; Michael Belisle; Steven Verhaverbeke; Alexander Ko; Kent Child; Elias Martinez

doi:10.1117/12.692644

21 June 2006 Advanced processes for photomask damage-free cleaning and photoresist removal

James S. Papanu, Roman Gouk, Han-Wen Chen, Pieter Boelen, Phillip Peters, Michael Belisle, Steven Verhaverbeke, Alexander Ko, Kent Child, Elias Martinez

Author Affiliations +

Proceedings Volume 6281, 22nd European Mask and Lithography Conference; 62810K (2006) https://doi.org/10.1117/12.692644
Event: 22nd European Mask and Lithography Conference, 2006, Dresden, Germany

Abstract

Photon induced haze resulting from sulfur residues that remain after cleaning and photoresist stripping is a key challenge for 193 nm photomasks. In previously reported work, sulfur-free processes for cleaning and photoresist removal on mask blanks were shown. Additional characterization and development of the cleaning and strip/clean processes are presented here. For cleaning the particle adder stability, ammonia chemistry residue levels, and chrome oxide anti-reflection coating (ARC) layer integrity were characterized. It was found that process modification was needed to provide acceptable post-clean ammonia levels and reflectivity change per clean. A strip/clean process with acceptable window for complete resist removal without ARC layer damage was found to be challenging and dependent on the mask photoresist/ARC stack. Dry strip, wet strip, and combined dry/wet stripping approaches (all followed by wet clean) were investigated. Oxidizing dry strip chemistry, while easily removing the bulk photoresist layer, gave unacceptable ARC attack. For FEP photoresist an all-wet process was demonstrated, and for iP and NEB resists, promising results were achieved with less oxidizing dry strip chemistry.

Citation Download Citation

James S. Papanu, Roman Gouk, Han-Wen Chen, Pieter Boelen, Phillip Peters, Michael Belisle, Steven Verhaverbeke, Alexander Ko, Kent Child, and Elias Martinez "Advanced processes for photomask damage-free cleaning and photoresist removal", Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 62810K (21 June 2006); https://doi.org/10.1117/12.692644

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