Thermal simulation studies of high-power light-emitting diodes

B. F. Fan M.D.; Y. Zhao; Y. L. Xian; G. Wang

doi:10.1117/12.691605

21 September 2006 Thermal simulation studies of high-power light-emitting diodes

B. F. Fan M.D., Y. Zhao, Y. L. Xian, G. Wang

Proceedings Volume 6355, Advanced LEDs for Solid State Lighting; 63550D (2006) https://doi.org/10.1117/12.691605
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea

Abstract

We showed a detailed thermal simulation of an Epi-down flip-chip packaged LED. Simulation results show that chip attachment defects can cause significant thermal gradients across the active layer of chip, leading to premature failures.

Citation Download Citation

B. F. Fan M.D., Y. Zhao, Y. L. Xian, and G. Wang "Thermal simulation studies of high-power light-emitting diodes", Proc. SPIE 6355, Advanced LEDs for Solid State Lighting, 63550D (21 September 2006); https://doi.org/10.1117/12.691605

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