Emission from cleaved indium phosphide (InP)

Dongguang Li

doi:10.1117/12.779339

1 November 2007 Emission from cleaved indium phosphide (InP)

Dongguang Li

Proceedings Volume 6423, International Conference on Smart Materials and Nanotechnology in Engineering; 64230T (2007) https://doi.org/10.1117/12.779339
Event: International Conference on Smart Materials and Nanotechnology in Engineering, 2007, Harbin, China

Abstract

This paper reports on further research into the structure and properties of the cleaved surfaces of InP, using vacuum cleavage luminescence detection methods. A detailed study is described on cleavage luminescence from InP both in vacuum and in ambient. Two cleavage luminescence signals were found, one at 1.25eV (bulk band gap radiation), called the A-signal, and the other at 1.9±0.3eV (surface defects signal), called the C-signal. All the signals have very short duration - about 10μs. The true duration could be much less. The signal C occurred both in vacuum and in air but the signal A was quenched in air.

Citation Download Citation

Dongguang Li "Emission from cleaved indium phosphide (InP)", Proc. SPIE 6423, International Conference on Smart Materials and Nanotechnology in Engineering, 64230T (1 November 2007); https://doi.org/10.1117/12.779339

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