Characterization of Ag doped p-type ZnO films

G. H. Kim; B. D. Ahn; D. L. Kim; K. H. Jung; S. Y. Lee

doi:10.1117/12.699613

20 February 2007 Characterization of Ag doped p-type ZnO films

G. H. Kim, B. D. Ahn, D. L. Kim, K. H. Jung, S. Y. Lee

Author Affiliations +

Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 647409 (2007) https://doi.org/10.1117/12.699613
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Ag-doped ZnO thin films have been fabricated by pulsed laser deposition. Thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically investigated to verify the doping mechanism of Ag doped ZnO thin film depending on deposition temperature. The fabricated p-type Ag doped ZnO films shows the hole concentration in the range from 4.9x10¹⁶ to 6.0x10¹⁷ cm^-3.

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G. H. Kim, B. D. Ahn, D. L. Kim, K. H. Jung, and S. Y. Lee "Characterization of Ag doped p-type ZnO films", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647409 (20 February 2007); https://doi.org/10.1117/12.699613

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