Morphological control of ZnO nanostructures grown on silicon

R. T. Rajendra Kumar; J. Grabowska; J. P. Mosnier; M. O. Henry; E. McGlynn

doi:10.1117/12.714026

20 February 2007 Morphological control of ZnO nanostructures grown on silicon

R. T. Rajendra Kumar, J. Grabowska, J. P. Mosnier, M. O. Henry, E. McGlynn

Author Affiliations +

Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 64741I (2007) https://doi.org/10.1117/12.714026
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We report growth of ZnO nanostructures on Au-coated Si substrates using vapor phase transport in the temperature range from 800°C to 1150°C. Nanostructures grown at 800°C are rod-like with diameters of ~ 200 nm. Growth at higher temperature shows a more complex behaviour with 2-D structures connecting 1-D nanorods at intermediate temperatures and 3-D growth at the highest temperatures. Our work indicates that it may be possible to systematically control the growth mode and morphology of ZnO nanostructures by tuning the growth temperature.

Citation Download Citation

R. T. Rajendra Kumar, J. Grabowska, J. P. Mosnier, M. O. Henry, and E. McGlynn "Morphological control of ZnO nanostructures grown on silicon", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64741I (20 February 2007); https://doi.org/10.1117/12.714026

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