Changes in resist glass transition temperatures due to exposure

Theodore H. Fedynyshyn; Indira Pottebaum; Alberto Cabral; Jeanette Roberts

doi:10.1117/12.713886

21 March 2007 Changes in resist glass transition temperatures due to exposure

Theodore H. Fedynyshyn, Indira Pottebaum, Alberto Cabral, Jeanette Roberts

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 651917 (2007) https://doi.org/10.1117/12.713886
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

We have developed an AFM-based technique to measure intrinsic material roughness (IMR) after base development. Employing this technique we have deconstructed the resist into component parts and have shown that PAG is a major contributor to intrinsic material roughness. When PAG is exposed and thermal polymer deprotection is allowed to occur increased levels of IMR are present. The IMR of the resist is strongly dependent on the bake conditions, with increasing IMR at higher bake temperatures. This leads to the suspicion that the resist glass transition temperature (T_g) may be responsible for the changes in the level of IMR observed with both different PAGs, polymers and bake temperatures. We have measured the T_g in a series of model resists, both exposed and unexposed, and show the effect of changes in resist glass transition as a function of exposure dose and not the level of polymer deprotection. The T_g of the resists does not decrease with exposure or bake as may be expected, but instead is either unchanged or slightly increases. The change in T_g occurs due to exposure only with subsequent bake steps not affecting the resist T_g.

Citation Download Citation

Theodore H. Fedynyshyn, Indira Pottebaum, Alberto Cabral, and Jeanette Roberts "Changes in resist glass transition temperatures due to exposure", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651917 (21 March 2007); https://doi.org/10.1117/12.713886

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