Paper
11 July 2007 XAFS study of phase-change recording material using actual media
Tsukasa Nakai, Masahiko Yoshiki, Yasuhiro Satoh
Author Affiliations +
Proceedings Volume 6620, Optical Data Storage 2007; 66202C (2007) https://doi.org/10.1117/12.738918
Event: Optical Data Storage 2007, 2007, Portland, OR, United States
Abstract
The relation of the local structure of the phase-change recording material and the interface layer has not been clarified while we already reported that the interface layer affects the electronic state of recording material by using the HX-PES method. It is necessary to understand more detailed physical phenomenon for crystallization mechanism of recording layer in order to develop the high-speed and higher density rewritable optical recording media. The influence of the interface layer to the local structure for atomic arrangement of a GeBiTe phase-change material was investigated by using XAFS on the actual rewritable HD DVD media. The XAFS signal and EXAFS oscillation from the actual media is obtained nondestructively. It has been shown that the interface layer influence slightly the local atomic arrangement of the recording layer, while the electronic state of recording layer is changed by the presence of the interface layer.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsukasa Nakai, Masahiko Yoshiki, and Yasuhiro Satoh "XAFS study of phase-change recording material using actual media", Proc. SPIE 6620, Optical Data Storage 2007, 66202C (11 July 2007); https://doi.org/10.1117/12.738918
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KEYWORDS
Interfaces

Crystals

Germanium

Digital video discs

X-rays

Chemical species

Tellurium

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