Fabrication of Cu(In,Al)Se2 solar cells by three-stage evaporation process

Takao Hayashi; Takashi Minemoto; Tsutomu Araki; Hideyuki Takakura

doi:10.1117/12.731718

11 September 2007 Fabrication of Cu(In,Al)Se₂ solar cells by three-stage evaporation process

Takao Hayashi, Takashi Minemoto, Tsutomu Araki, Hideyuki Takakura

Proceedings Volume 6651, Photovoltaic Cell and Module Technologies; 66510L (2007) https://doi.org/10.1117/12.731718
Event: Solar Energy + Applications, 2007, San Diego, California, United States

Abstract

Cu(In,Ga)Se₂ (CIGS) solar cells are leading candidates for low-cost and high-efficiency solar cells. A band gap energy (E_g) of CIGS can be controlled from 1.0 eV (CuInSe₂) to 1.7 eV (CuGaSe₂). The E_g of CIGS can be adjusted to the theoretically estimated optimum value of 1.4 eV. However, maximum efficiencies for CIGS solar cells were achieved at E_g=1.1~1.2 eV. A higher-Ga addition degrades the electronic properties of CIGS films. Compared to CIGS, Cu(In,Al)Se₂ (CIAS) can be adjusted the same E_g by a small Al addition. We report on the fabrication of the CIAS film on Mo/soda-lime glass (SLG) substrate by a three-stage evaporation process. The film composition was Cu/(In+Al)=0.89, Se/Metal=0.99 and Al/(In+Al)=0.15. The E_g of the film was 1.15 eV from the quantum efficiency measurement. The cross-sectional scanning electron microscope image of the film showed a grain size of approximately 1μm. The composition depth profile by secondary ion mass spectroscopy showed the V-shape distribution of Al in the depth direction. The CIAS solar cell consisted of Al/ITO/ZnO/CdS/CIAS/Mo/SLG was fabricated. The active cell area was 0.12 cm². A current-voltage measurement under illumination (AM1.5, 100mW/cm²) at 25°C showed the area efficiency of 13.1% without antireflection coating.

Citation Download Citation

Takao Hayashi, Takashi Minemoto, Tsutomu Araki, and Hideyuki Takakura "Fabrication of Cu(In,Al)Se₂ solar cells by three-stage evaporation process", Proc. SPIE 6651, Photovoltaic Cell and Module Technologies, 66510L (11 September 2007); https://doi.org/10.1117/12.731718

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