Advances in high-brightness semiconductor lasers

M. L. Osowski; W. Hu; R. M. Lammert; S. W. Oh; P. T. Rudy; T. Stakelon; J. E. Ungar

doi:10.1117/12.763434

13 February 2008 Advances in high-brightness semiconductor lasers

M. L. Osowski, W. Hu, R. M. Lammert, S. W. Oh, P. T. Rudy, T. Stakelon, J. E. Ungar

Author Affiliations +

Proceedings Volume 6876, High-Power Diode Laser Technology and Applications VI; 68761E (2008) https://doi.org/10.1117/12.763434
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States

Abstract

We present recent advances in high power multimode and single semiconductor lasers. We review high power operation with increased spectral brightness using on-chip internal gratings and increased spatial brightness at wavelengths from the near infrared to the eye-safe regime. New high power, high brightness fiber coupled semiconductor lasers are described.

Citation Download Citation

M. L. Osowski, W. Hu, R. M. Lammert, S. W. Oh, P. T. Rudy, T. Stakelon, and J. E. Ungar "Advances in high-brightness semiconductor lasers", Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68761E (13 February 2008); https://doi.org/10.1117/12.763434

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