Laser-induced plume expansion from a silicon wafer in a wide range of ambient gas pressure

Alexey N. Volkov; German A. Lukianov; Gerard M. O'Connor

doi:10.1117/12.787119

15 January 2008 Laser-induced plume expansion from a silicon wafer in a wide range of ambient gas pressure

Alexey N. Volkov, German A. Lukianov, Gerard M. O'Connor

Proceedings Volume 6985, Fundamentals of Laser Assisted Micro- and Nanotechnologies; 69850P (2008) https://doi.org/10.1117/12.787119
Event: Fundamentals of Laser Assisted Micro- and Nanotechnologies, 2007, St. Petersburg, Russian Federation

Abstract

Expansion of the laser plume into surrounding gas is considered in the range of ambient gas pressure from 0.1 bar to 1 bar using a kinetic approach. Plume is generated by a nanosecond laser pulse irradiating a silicon wafer. Absorption of laser radiation by the silicon wafer, its heating and melting are described by a two-dimensional thermal model. Axisymmetric flow in the laser plume is calculated by the Direct Simulation Monte Carlo method. Collisions between molecules are described by the hard spheres - Larsen-Borgnakke model. Ablation rate is found from the Hertz-Knudsen equation with taking into account of the back flux of atoms re-deposited at the surface from the plume. The purpose of the work is to study the influence of surrounding gas pressure and its chemical composition on the flow patterns and mixture process in the ablation plume and deposition of the ablated material back to the irradiated surface.

Citation Download Citation

Alexey N. Volkov, German A. Lukianov, and Gerard M. O'Connor "Laser-induced plume expansion from a silicon wafer in a wide range of ambient gas pressure", Proc. SPIE 6985, Fundamentals of Laser Assisted Micro- and Nanotechnologies, 69850P (15 January 2008); https://doi.org/10.1117/12.787119

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