Magnetooptical bistability of layer semiconductors in the field of exciton absorption

C. Yu. Zenkova; V. M. Kramar; N. K. Kramar; O. V. Derevyanchuk

doi:10.1117/12.797009

22 April 2008 Magnetooptical bistability of layer semiconductors in the field of exciton absorption

C. Yu. Zenkova, V. M. Kramar, N. K. Kramar, O. V. Derevyanchuk

Proceedings Volume 7008, Eighth International Conference on Correlation Optics; 700810 (2008) https://doi.org/10.1117/12.797009
Event: Eighth International Conference on Correlation Optics, 2007, Chernivsti, Ukraine

Abstract

The influence of weak external magnetic fields on the conditions of optical bistability (OB) realization in the field of exciton absorption in layer semiconductors has been investigated theoretically. Using the 2H-polytype of PbI₂ as an example, it is shown that by changing the intensity of the external magnetic field it is possible to obtain the OB realization region without changing the excitation laser frequency. It is also possible to control effectively the position and size of the hysteresis absorption loop caused by the existence of several exciton zones and due to the peculiar features of the layer crystal structure.

Citation Download Citation

C. Yu. Zenkova, V. M. Kramar, N. K. Kramar, and O. V. Derevyanchuk "Magnetooptical bistability of layer semiconductors in the field of exciton absorption", Proc. SPIE 7008, Eighth International Conference on Correlation Optics, 700810 (22 April 2008); https://doi.org/10.1117/12.797009

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