Paper
23 April 2008 Reflectivity kinetics in the vicinity of exciton transitions in semiconductor nanostructures
N. N. Rubtsova, O. V. Buganov, A. A. Kovalyov, M. A. Putyato, V. V. Preobrazhenski, O. P. Pchelyakov, S. A. Tikhomirov, T. S. Shamirzaev
Author Affiliations +
Proceedings Volume 7024, International Workshop on Quantum Optics 2007; 70240O (2008) https://doi.org/10.1117/12.801692
Event: International Workshop on Quantum Optics 2003, 2003, St. Petersburg, Russian Federation
Abstract
Reflectivity kinetics of semiconductor samples with GaAs/AlGaAs multiple quantum wells is investigated by the pump-probe technique with temporal resolution of about 150 fs. Excitons of type E1HH1 and E1LH1 appear in the kinetics of non-stationary spectra of reflectivity in spite of high density of photo-generated two-dimensional electron gas. The difference in the shape and kinetics of nonstationary reflectivity spectra is found for the samples with different detuning of exciton transition relative the pump radiation frequency.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. N. Rubtsova, O. V. Buganov, A. A. Kovalyov, M. A. Putyato, V. V. Preobrazhenski, O. P. Pchelyakov, S. A. Tikhomirov, and T. S. Shamirzaev "Reflectivity kinetics in the vicinity of exciton transitions in semiconductor nanostructures", Proc. SPIE 7024, International Workshop on Quantum Optics 2007, 70240O (23 April 2008); https://doi.org/10.1117/12.801692
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Excitons

Reflectivity

Semiconductors

Quantum wells

Gallium arsenide

Luminescence

Nanostructures

Back to Top