Focused ion beam source of a new type for micro- and nanoelectronics technologies

V. L. Varentsov

doi:10.1117/12.802356

29 April 2008 Focused ion beam source of a new type for micro- and nanoelectronics technologies

V. L. Varentsov

Author Affiliations +

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702509 (2008) https://doi.org/10.1117/12.802356
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

A focused ion beam source of a new type is suggested for the first time. The original design of this source is based on the using of both a laser ablation and an advanced ion beam buffer gas cooling technique. Operation of the new ion beam source has been studied by means of computer experiments. For this purpose, detailed gas dynamic simulations based on the solution of a full system of time-dependent Navier-Stokes equations have been performed for both a conical supersonic nozzle having an inner tube on the axis and a novel RF-funnel extraction system. The results of gas dynamic calculations were used for detailed microscopic Monte Carlo ion-beam trajectory simulations under the combined effect of the buffer gas flow and electric fields of the RF-funnel. The obtained results made it apparent that the suggested ion beam source looks very promising for the use in the micro- and nanoelectronics technologies.

Citation Download Citation

V. L. Varentsov "Focused ion beam source of a new type for micro- and nanoelectronics technologies", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702509 (29 April 2008); https://doi.org/10.1117/12.802356

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