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Silicon on insulator (SOI) substrate was prepared using ion implantation of oxygen technique. For piezoresistive
detection, the top layer (0.2 &mgr;m thick) silicon was used as an active material with the excellent single crystal silicon
properties. The structure of the pressure sensor chip was simulated and analyzed using the finite element method. The
pressure gauge chips were manufactured using MEMS techniques. The Si3N4 films were applied for the mask, and the
silicon cups were manufactured using KOH anisotropic wet etching process. Cr/Ni/Au multi-layers metal electrodes
were applied to guarantee the reliable work at high temperature. The manufactured sensors were measured with an
applied pressure of 0 to 6.0MPa at 300 . The test results showed that the sensitivity was approximately 30mV/
(mA MPa), the non-linearity was less than 1.5&perthou; FS, the repetition was less than 0.9&perthou; FS. The research showed that the
SOI piezoresistive pressure sensor could reliably work at a high temperature.
Shixin Pang,Xin Li,Qin Liu, andKaixian Xu
"Development of high-temperature piezoresistive pressure sensor based silicon on insulator", Proc. SPIE 7133, Fifth International Symposium on Instrumentation Science and Technology, 71334O (12 January 2009); https://doi.org/10.1117/12.807589
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Shixin Pang, Xin Li, Qin Liu, Kaixian Xu, "Development of high-temperature piezoresistive pressure sensor based silicon on insulator," Proc. SPIE 7133, Fifth International Symposium on Instrumentation Science and Technology, 71334O (12 January 2009); https://doi.org/10.1117/12.807589