Engineered quantum dot structures: fabrication and applications

Johann Peter Reithmaier; Emil-Mihai Pavelescu; Christian Gilfert; A. Gushterov; Wolfgang Kaiser; Pia Weinmann; Martin Kamp; Alfred Forchel; Alfredo Martín-Mínguez; Ignacio Esquivias

doi:10.1117/12.815359

26 January 2009 Engineered quantum dot structures: fabrication and applications

Johann Peter Reithmaier, Emil-Mihai Pavelescu, Christian Gilfert, A. Gushterov, Wolfgang Kaiser, Pia Weinmann, Martin Kamp, Alfred Forchel, Alfredo Martín-Mínguez, Ignacio Esquivias

Author Affiliations +

Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 72220R (2009) https://doi.org/10.1117/12.815359
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Quantum dot structures with tailored geometries were developed for different high power laser applications by molecular beam epitaxy based self-assembly techniques. 920 nm quantum dot laser material with new record values of 0.08 nm/K in temperature dependent wavelength shift could be obtained, which is a factor of 4 lower than for quantum well lasers. Tapered distributed Bragg reflector laser devices were processed, which exhibit single mode output powers of more than 1 W in cw with an M² value of 2. For display applications based on frequency doubling, 1060 nm quantum dot laser material is developed with and without tunnel injection quantum well active zones. With this new type of laser material an output power of 4.5 W could be obtained on 100 μm broad area lasers. An overview is given on this recent work performed within the frame of the EU project "WWW_BRIGHTER_EU".

Citation Download Citation

Johann Peter Reithmaier, Emil-Mihai Pavelescu, Christian Gilfert, A. Gushterov, Wolfgang Kaiser, Pia Weinmann, Martin Kamp, Alfred Forchel, Alfredo Martín-Mínguez, and Ignacio Esquivias "Engineered quantum dot structures: fabrication and applications", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220R (26 January 2009); https://doi.org/10.1117/12.815359

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