Paper
14 January 1987 Analysis and Design of External Cavity, Strong Feedback, Semiconductor Lasers for Use with Coherent Optical Communication Systems
Il-Whan Oh, Harish R. D. Sunak
Author Affiliations +
Proceedings Volume 0723, Progress in Semiconductor Laser Diodes; (1987) https://doi.org/10.1117/12.937695
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
External cavity, strong optical feedback, semiconductor lasers are analyzed using a rotated ellipse gain(REG) model. The model considers laser diode characteristics as well as the effects of optical feedback. Theoretical calculations on this strong feedback structure are developed in terms of amplification, injection locking, and mode ratio. Threshold current is expressed as a function of wavelength and temperature. Also various formulae for threshold current reduction, effective current, amplified output power, and reduced spectral linewidth are presented. From the amplified output power we calculate the spectral linewidth. We analyze in more detail the theoretical work of Patzak et al and show that spontaneous emission is reduced by frequency selective strong optical feedback. In designing external cavity lasers with strong feedback, mode ratio has to be larger than 100 for stable output power and frequency. It is possible to obtain many characteristic properties of the solitary laser diode with the help of the REG model.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Il-Whan Oh and Harish R. D. Sunak "Analysis and Design of External Cavity, Strong Feedback, Semiconductor Lasers for Use with Coherent Optical Communication Systems", Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); https://doi.org/10.1117/12.937695
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KEYWORDS
Semiconductor lasers

Laser damage threshold

Antireflective coatings

Reflectivity

Laser optics

Diodes

Platinum

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