Paper
30 December 2008 Pt/ZnO/SiC thin film for hydrogen gas sensing
Jerry C. W. Yu, Mahnaz Shafiei, Christopher Ling, Wojtek B. Wlodarski, Kourosh Kalantar-Zadeh
Author Affiliations +
Proceedings Volume 7268, Smart Structures, Devices, and Systems IV; 72680L (2008) https://doi.org/10.1117/12.810586
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2008, Melbourne, Australia
Abstract
Zinc oxide (ZnO) is one of the most promising electronic and photonic materials to date. In this work, we present an enhanced ZnO Schottky gas sensor deposited on SiC substrates in comparison to those reported previously in literature. The performance of ZnO/SiC based Schottky thin film gas sensors produced a forward lateral voltage shift of 12.99mV and 111.87mV in response to concentrations of hydrogen gas at 0.06% and 1% in air at optimum temperature of 330 ºC. The maximum change in barrier height was calculated as 37.9 meV for 1% H2 sensing operation at the optimum temperature.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerry C. W. Yu, Mahnaz Shafiei, Christopher Ling, Wojtek B. Wlodarski, and Kourosh Kalantar-Zadeh "Pt/ZnO/SiC thin film for hydrogen gas sensing", Proc. SPIE 7268, Smart Structures, Devices, and Systems IV, 72680L (30 December 2008); https://doi.org/10.1117/12.810586
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Cited by 4 scholarly publications.
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KEYWORDS
Gas sensors

Hydrogen

Zinc oxide

Sensors

Thin films

Metals

Platinum

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