Illustration of illumination effects on proximity, focus spillover, and design rules

Lynn T.-N. Wang; Anthony Yeh; Lilly Kem; Andrew R. Neureuther

doi:10.1117/12.814222

12 March 2009 Illustration of illumination effects on proximity, focus spillover, and design rules

Lynn T.-N. Wang, Anthony Yeh, Lilly Kem, Andrew R. Neureuther

Author Affiliations +

Proceedings Volume 7275, Design for Manufacturability through Design-Process Integration III; 72750B (2009) https://doi.org/10.1117/12.814222
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Visualization at the mask plane of the effects of illumination, proximity, and defocus is used to give physical insight into restricted design rules, layout choices, and residual edge placement errors. To facilitate this work, a pattern matching code has been tuned, tested, and enhanced. The richness of the original code with complex match factors, mask Boolean operations, and mask weights and phases has been adapted to operate on clear-field attenuated-phase-shifting masks with asymmetrical illumination. To account for illumination effects, the aberration spillover is multiplied by the Fourier transform of the angular distribution of the intensity spectrum incident on the mask. In a study of binary mask layouts, the R-squared correlation of the prediction of image intensity with Pattern Match Factor increased from 0.57 to 0.89 when annular illumination was included in the spillover function. In addition, features to visualize the mutual coherence, shifts of the illumination, and source maps have been added.

Citation Download Citation

Lynn T.-N. Wang, Anthony Yeh, Lilly Kem, and Andrew R. Neureuther "Illustration of illumination effects on proximity, focus spillover, and design rules", Proc. SPIE 7275, Design for Manufacturability through Design-Process Integration III, 72750B (12 March 2009); https://doi.org/10.1117/12.814222

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