Effects of laser field on the energy spectra in GaAs parabolic quantum wells

Liliana M. Burileanu; Ecaterina C. Niculescu; Adrian Radu

doi:10.1117/12.823677

7 January 2009 Effects of laser field on the energy spectra in GaAs parabolic quantum wells

Liliana M. Burileanu, Ecaterina C. Niculescu, Adrian Radu

Proceedings Volume 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV; 72971U (2009) https://doi.org/10.1117/12.823677
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 2008, Constanta, Romania

Abstract

The binding energy of a shallow donor in a parabolic quantum well subjected to a longitudinal electric field and an intense laser field radiation is calculated with use of a variational method. It is shown that the electric field effect on the "dressed" impurity states depends on the position of the donor within a quantum well of finite depth. The laser field can essentially change single-electron spectra in the structure. This may be useful for understanding physical phenomena and designing optoelectronic devices.

Citation Download Citation

Liliana M. Burileanu, Ecaterina C. Niculescu, and Adrian Radu "Effects of laser field on the energy spectra in GaAs parabolic quantum wells", Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72971U (7 January 2009); https://doi.org/10.1117/12.823677

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