Paper
7 January 2009 On the stability of MOS Hall devices
George Căruntu, Cornel Panait
Author Affiliations +
Proceedings Volume 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV; 72972O (2009) https://doi.org/10.1117/12.823708
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 2008, Constanta, Romania
Abstract
In a system of measuring in which the Hall device is used as input transducer, its stability is essential for transfer constant of system. In this work is analyzed the variation of the charge carriers density on the stability of magnetic sensors realized on the MOS Hall plates. In the same time it is emphasized the way in which the adequate choice of the material properties and geometry of the device allow an increase in its stability.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George Căruntu and Cornel Panait "On the stability of MOS Hall devices", Proc. SPIE 7297, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies IV, 72972O (7 January 2009); https://doi.org/10.1117/12.823708
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KEYWORDS
Molybdenum

Magnetism

Interfaces

Gallium arsenide

Magnetic sensors

Oxides

Resistance

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