Integrated thermoelectric infrared sensor with XeF2 etching

De-hui Xu; Bin Xiong; Yue-lin Wang; Mi-feng Liu

doi:10.1117/12.834699

24 August 2009 Integrated thermoelectric infrared sensor with XeF₂ etching

De-hui Xu, Bin Xiong, Yue-lin Wang, Mi-feng Liu

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73812M (2009) https://doi.org/10.1117/12.834699
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

In this paper, the design, simulation, fabrication and testing of an integrated thermoelectric infrared sensor have been demonstrated. The integrated thermoelectric sensor has been fabricated by a standard p-well CMOS technology and a maskless XeF₂ post-CMOS micromachining process. The modeling of the infrared sensor has been performed numerically using FEM method. With a 2.5 μm thick stacked silicon oxide-nitride-oxide multi-layers as absorber, the prototype sensor achieved a responsivity of 14.7 V W^-1, a specific detectivity of 4.07 × 10⁷ cm Hz^1/2 W^-1 and a time constant about 23 ms. The effects of XeF₂ etching on the CMOS devices have also been studied. XeF₂ post-CMOS micromachining was found to have insignificant effects on CMOS devices.

Citation Download Citation

De-hui Xu, Bin Xiong, Yue-lin Wang, and Mi-feng Liu "Integrated thermoelectric infrared sensor with XeF₂ etching", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73812M (24 August 2009); https://doi.org/10.1117/12.834699

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