Paper
28 August 2009 The endpoint detection technique for deep submicrometer plasma etching
Wei Wang, Zhi-yun Du, Yong Zeng, Zhong-went Lan
Author Affiliations +
Proceedings Volume 7382, International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging; 738216 (2009) https://doi.org/10.1117/12.834854
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
The availability of reliable optical sensor technology provides opportunities to better characterize and control plasma etching processes in real time, they could play a important role in endpoint detection, fault diagnostics and processes feedback control and so on. The optical emission spectroscopy (OES) method becomes deficient in the case of deep submicrometer gate etching. In the newly developed high density inductively coupled plasma (HD-ICP) etching system, Interferometry endpoint (IEP) is introduced to get the EPD. The IEP fringe count algorithm is investigated to predict the end point, and then its signal is used to control etching rate and to call end point with OES signal in over etching (OE) processes step. The experiment results show that IEP together with OES provide extra process control margin for advanced device with thinner gate oxide.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Wang, Zhi-yun Du, Yong Zeng, and Zhong-went Lan "The endpoint detection technique for deep submicrometer plasma etching", Proc. SPIE 7382, International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging, 738216 (28 August 2009); https://doi.org/10.1117/12.834854
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KEYWORDS
Etching

Plasma etching

Interferometry

Plasma

Process control

Semiconducting wafers

Neural networks

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