Terahertz generation from SI-GaAs photoconductive dipole antenna with different electrode gaps

Wei Shi; Zhen-zhen Zhang; Lei Hou; Zheng Liu

doi:10.1117/12.835229

4 August 2009 Terahertz generation from SI-GaAs photoconductive dipole antenna with different electrode gaps

Wei Shi, Zhen-zhen Zhang, Lei Hou, Zheng Liu

Proceedings Volume 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications; 73851P (2009) https://doi.org/10.1117/12.835229
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

Many factors influence the radiation power of terahertz (THz) emitters including photoconductive substrate material, antenna geometrical structure and excite light power. In this paper we mainly focus on the performance of semi-insulating (SI) GaAs photoconductive antennas with different geometrical sizes. Three kinds of antennas were prepared with the same structure, material and electrode width (100μm), but with different electrodes gaps of 50μm, 100μm and 150μm, respectively. They were excited by a femto-second fiber laser and tested with THz generation capability. It turns out that the three antennas have a same spectrum scope of 0.2-3THz. The small gap antenna can emit higher THz radiation with lower voltage but it was easy to burn down, that's why a large gap is needed to get higher THz power. Triggered by the same laser of several nJ, peak frequency moves to high frequency with decrease of electrode gaps. Radiation field screening is the dominant causation.

Citation Download Citation

Wei Shi, Zhen-zhen Zhang, Lei Hou, and Zheng Liu "Terahertz generation from SI-GaAs photoconductive dipole antenna with different electrode gaps", Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 73851P (4 August 2009); https://doi.org/10.1117/12.835229

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