Reactive Ion Etching of Al-1%Cu alloy thin films

Jun Gou; Zhi-ming Wu; Hui-ling Tai; Kai Yuan

doi:10.1117/12.837738

20 November 2009 Reactive Ion Etching of Al-1%Cu alloy thin films

Jun Gou, Zhi-ming Wu, Hui-ling Tai, Kai Yuan

Proceedings Volume 7510, 2009 International Conference on Optical Instruments and Technology: MEMS/NEMS Technology and Applications; 75100D (2009) https://doi.org/10.1117/12.837738
Event: International Conference on Optical Instrumentation and Technology, 2009, Shanghai, China

Abstract

The special technical process was demaned for the reactive ion etching (RIE) of AlCu alloy thin films, such as the removal of doped Cu, the protection of sidewall and the prevention of chlorine corrosion after etching. In this paper, Al-1%Cu alloy was etched using BCl₃, Cl₂ and N₂ gases, and CH₄ was also added in the etching gases in order to enhance the sidewall protection. The process was optimized and the multi-step process were abtained. The effect of CH₄ on sidewall protection was analyzed. The removal of residue after the etch was also studied.

Citation Download Citation

Jun Gou, Zhi-ming Wu, Hui-ling Tai, and Kai Yuan "Reactive Ion Etching of Al-1%Cu alloy thin films", Proc. SPIE 7510, 2009 International Conference on Optical Instruments and Technology: MEMS/NEMS Technology and Applications, 75100D (20 November 2009); https://doi.org/10.1117/12.837738

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