Si wires growth by using of magnetron sputtering method

S. A. Evlashin; V. A. Krivchenko; P. V. Pastchenko; A. T. Rakhimov; N. V. Suetin; M. A. Timofeyev

doi:10.1117/12.854206

26 February 2010 Si wires growth by using of magnetron sputtering method

S. A. Evlashin, V. A. Krivchenko, P. V. Pastchenko, A. T. Rakhimov, N. V. Suetin, M. A. Timofeyev

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752111 (2010) https://doi.org/10.1117/12.854206
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

New method of Si wires synthesis by magnetron sputtering of solid target as a Si source is described. This method is simple, safe and cheaper in comparison with Chemical Vapor Deposition (CVD). Influence of silicon atom flow rates (target sputtering rate) and substrate temperature on the growth of different Si structures were studied. It was found that Si wires have different morphology, which depends on the Si flux and substrate temperature.

Citation Download Citation

S. A. Evlashin, V. A. Krivchenko, P. V. Pastchenko, A. T. Rakhimov, N. V. Suetin, and M. A. Timofeyev "Si wires growth by using of magnetron sputtering method", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752111 (26 February 2010); https://doi.org/10.1117/12.854206

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