Paper
11 February 2010 High efficiency green LEDs using II-VI color converters
Thomas J. Miller, Michael A. Haase, Xiaoguang Sun, Bing Hao, Junying Zhang, Terry L. Smith, Todd Ballen, Junqing Xie, Amy S. Barnes, Fedja Kecman, Joseph Yang, James Thielen, Catherine A. Leatherdale, Ralph Wirth, Andreas Biebersdorf, Karl Engl, Stefan Groetsch
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Abstract
II-VI semiconductors can exhibit strong photoluminescence throughout the visible spectrum and are excellent candidates for filling the so-called "green gap". We report on the performance of green color-converted LEDs fabricated by bonding CdMgZnSe multiple quantum well structures to high-efficiency blue-emitting GaInN LEDs. A device efficacy of 181 lm/W at 537 nm (dominant) is measured under room temperature, 350 mA/mm2 quasi-cw conditions, more than twice as efficient as typical commercial green LEDs today. The thermal roll-off is shown to be comparable to that of typical green GaInN LEDs. Finally, the implications of the availability of high-efficiency, narrow-band, green and yellow emitters in display applications will be discussed.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas J. Miller, Michael A. Haase, Xiaoguang Sun, Bing Hao, Junying Zhang, Terry L. Smith, Todd Ballen, Junqing Xie, Amy S. Barnes, Fedja Kecman, Joseph Yang, James Thielen, Catherine A. Leatherdale, Ralph Wirth, Andreas Biebersdorf, Karl Engl, and Stefan Groetsch "High efficiency green LEDs using II-VI color converters", Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76171A (11 February 2010); https://doi.org/10.1117/12.853330
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Cited by 7 scholarly publications.
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KEYWORDS
Light emitting diodes

Green light emitting diodes

Quantum wells

Semiconducting wafers

Temperature metrology

Gallium nitride

Glasses

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