The important challenge to extend spacer DP process towards 22nm and beyond

Kenichi Oyama; Eiichi Nishimura; Masato Kushibiki; Kazuhide Hasebe; Shigeru Nakajima; Hiroki Murakami; Arisa Hara; Shohei Yamauchi; Sakurako Natori; Kazuo Yabe; Tomohito Yamaji; Ryota Nakatsuji; Hidetami Yaegashi

doi:10.1117/12.845970

25 March 2010 The important challenge to extend spacer DP process towards 22nm and beyond

Kenichi Oyama, Eiichi Nishimura, Masato Kushibiki, Kazuhide Hasebe, Shigeru Nakajima, Hiroki Murakami, Arisa Hara, Shohei Yamauchi, Sakurako Natori, Kazuo Yabe, Tomohito Yamaji, Ryota Nakatsuji, Hidetami Yaegashi

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Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 763907 (2010) https://doi.org/10.1117/12.845970
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Double patterning processes are techniques that can be used to form etching mask patterns for 32nm node and possibly for 22nm node as well. The self-aligned spacer process has drawn much attention as an effective means of enabling the formation of repetitive patterns. The self-aligned spacer process is now being used in actual device manufacturing, but it has many process steps driving up process cost while also assuming a 1D pattern. This paper demonstrates extensions of the self-aligned spacer process by an enhanced 2D positive spacer process and a newly developed spacer DP process using a 1D negative spacer.

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Kenichi Oyama, Eiichi Nishimura, Masato Kushibiki, Kazuhide Hasebe, Shigeru Nakajima, Hiroki Murakami, Arisa Hara, Shohei Yamauchi, Sakurako Natori, Kazuo Yabe, Tomohito Yamaji, Ryota Nakatsuji, and Hidetami Yaegashi "The important challenge to extend spacer DP process towards 22nm and beyond", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763907 (25 March 2010); https://doi.org/10.1117/12.845970

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