Paper
20 April 2011 High sensitive and fast scanner focus monitoring method using forbidden pitch pattern
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Abstract
Forbidden pitch which is introduced under a dipole illumination condition has extremely narrow DOF (Depth Of Focus). Therefore when a lithographic pattern is transferred on a wafer the forbidden pitch should be removed from the layout. However this narrow DOF behavior can be utilized to monitor a focus of scanner systems due to its sensitiveness to focus changes. In this paper, a newly developed focus monitoring method utilizing a forbidden pitch pattern will be introduced and the benefits and sensitivity of this method will be discussed in details.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinseok Heo, Jeong-Ho Yeo, and Younghee Kim "High sensitive and fast scanner focus monitoring method using forbidden pitch pattern", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79711C (20 April 2011); https://doi.org/10.1117/12.879802
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Scanners

Inspection

Spatial resolution

Calibration

Image enhancement

Image resolution

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