Paper
20 May 2011 Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-XSbX alloys
G. Belenky, G. Kipshidze, D. Donetsky, S. P. Svensson, W. L. Sarney, H. Hier, L. Shterengas, D. Wang, Y. Lin
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Abstract
GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs1-XSbXepilayers with lattice constants up to 2.1 % larger than that of GaSb. The InAsSb buffer layer was used to grow InAs0.12Sb0.88 layer on InSb. The structural and optical characterization of 1-μm thick InAs1-xSbx layers was performed together with measurements of the carrier lifetime.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Belenky, G. Kipshidze, D. Donetsky, S. P. Svensson, W. L. Sarney, H. Hier, L. Shterengas, D. Wang, and Y. Lin "Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-XSbX alloys", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80120W (20 May 2011); https://doi.org/10.1117/12.883625
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Cited by 29 scholarly publications.
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KEYWORDS
Laser sintering

Gallium antimonide

Antimony

Long wavelength infrared

Absorption

Mercury cadmium telluride

Mid-IR

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