Paper
19 April 2011 Simulation of silicon thin-film solar cells for oblique incident waves
Christine Jandl, Kai Hertel, Christoph Pflaum, Helmut Stiebig
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Abstract
To optimize the quantum efficiency (QE) and short-circuit current density (JSC) of silicon thin-film solar cells, one has to study the behavior of sunlight in these solar cells. Simulations are an adequate and economic method to analyze the optical properties of light caused by absorption and reflection. To this end a simulation tool is developed to take several demands into account. These include the analysis of perpendicular and oblique incident waves under E-, H- and circularly polarized light. Furthermore, the topology of the nanotextured interfaces influences the efficiency and therefore also the short-circuit current density. It is well known that a rough transparent conductive oxide (TCO) layer increases the efficiency of solar cells. Therefore, it is indispensable that various roughness profiles at the interfaces of the solar cell layers can be modeled in such a way that atomic force microscope (AFM) scan data can be integrated. Numerical calculations of Maxwell's equations based on the finite integration technique (FIT) and Finite Difference Time Domain (FDTD) method are necessary to incorporate all these requirements. The simulations are performed in parallel on high performance computers (HPC) to meet the large computational requirements.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christine Jandl, Kai Hertel, Christoph Pflaum, and Helmut Stiebig "Simulation of silicon thin-film solar cells for oblique incident waves", Proc. SPIE 8065, SPIE Eco-Photonics 2011: Sustainable Design, Manufacturing, and Engineering Workforce Education for a Green Future, 806505 (19 April 2011); https://doi.org/10.1117/12.882860
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Cited by 4 scholarly publications.
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KEYWORDS
Solar cells

Atomic force microscopy

Quantum efficiency

Thin film solar cells

Polarization

Transparent conductors

Data modeling

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