Photoemission performance of gradient-doping transmission-mode GaAs photocathodes

Yijun Zhang; Jun Niu; Jijun Zou; Yajuan Xiong; Benkang Chang; Junju Zhang; Yujie Du

doi:10.1117/12.898952

18 August 2011 Photoemission performance of gradient-doping transmission-mode GaAs photocathodes

Yijun Zhang, Jun Niu, Jijun Zou, Yajuan Xiong, Benkang Chang, Junju Zhang, Yujie Du

Proceedings Volume 8194, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications; 81940N (2011) https://doi.org/10.1117/12.898952
Event: International Symposium on Photoelectronic Detection and Imaging 2011, 2011, Beijing, China

Abstract

With an attempt to improve the photoelectron emission efficiency, a gradient-doping structure proposed based on the Spicer's three-step model has been applied to the preparation of the transmission-mode GaAs photocathode via molecular beam epitaxy technique. The Cs-O activation phenomenon suggests that the gradient-doping structure can bring a potential photoemission capability with the increase of activation time, and the spectral response curves show that the gradient-doping photocathode can obtain a higher response capability in the entire waveband region, especially in the regions of short-wavelength threshold and long-wavelength threshold. By fitting quantum yield curves, the obtained cathode performance parameters such as electron average diffusion length and electron escape probability of the gradient-doping photocathode are greater than those of the uniform-doping one. The electron average diffusion length of the gradient-doping photocathode achieves 3.2 μm. The improvement in cathode performance of the gradient-doping photocathode could be ascribed to the downward gradient band-bending structure.

Citation Download Citation

Yijun Zhang, Jun Niu, Jijun Zou, Yajuan Xiong, Benkang Chang, Junju Zhang, and Yujie Du "Photoemission performance of gradient-doping transmission-mode GaAs photocathodes", Proc. SPIE 8194, International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, 81940N (18 August 2011); https://doi.org/10.1117/12.898952

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