Measurement of the polarimetric response of suspended gallium doped silicon nanowires

Michael J. Theisen; Brian L. McIntyre; Thomas G. Brown

doi:10.1117/12.908460

2 February 2012 Measurement of the polarimetric response of suspended gallium doped silicon nanowires

Michael J. Theisen, Brian L. McIntyre, Thomas G. Brown

Proceedings Volume 8227, Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XIX; 82270P (2012) https://doi.org/10.1117/12.908460
Event: SPIE BiOS, 2012, San Francisco, California, United States

Abstract

We describe an investigation of the polarimetric properties of suspended gallium doped silicon (Si:Ga) nanowires. Wire fabrication has been done with a combined gallium implantation (using a focused ion beam) and subsequent reactive ion and wet etches. A polarimetric microscope has been built and calibrated. Measurement of the polarimetric response shows a high reflectivity and strong retardance on reflection, with some samples showing low diattenuation, in contrast to conventional wire grid polarizers.

Citation Download Citation

Michael J. Theisen, Brian L. McIntyre, and Thomas G. Brown "Measurement of the polarimetric response of suspended gallium doped silicon nanowires", Proc. SPIE 8227, Three-Dimensional and Multidimensional Microscopy: Image Acquisition and Processing XIX, 82270P (2 February 2012); https://doi.org/10.1117/12.908460

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KEYWORDS

Nanowires

Polarimetry

Etching

Gallium

Silicon

Polarization

Microscopes

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