Paper
20 January 2012 Two-photon conductivity in semiconductors: a new tool for the study of the quantum properties of light
E. Rosencher, F. Boitier, A. Godard, C. Fabre
Author Affiliations +
Abstract
Two-photon absorption in GaAs occurs once two photon impinge on the semiconductor surface within the virtual state lifetime, i.e. few fs. Two photon conductivity (TPC) in GaAs is thus particulary well fitted to measure photon coincidence rates in the femtosecond range. Using this new TPC technique we have evidenced various original quantum properties of light, such as photon bunching in thermal light and extrabunching of twin beams. This technique opens new avenues in quantum optics, for quantum cryptography, ghost imaging or non linear optics.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Rosencher, F. Boitier, A. Godard, and C. Fabre "Two-photon conductivity in semiconductors: a new tool for the study of the quantum properties of light", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 826823 (20 January 2012); https://doi.org/10.1117/12.913974
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KEYWORDS
Semiconductors

Absorption

Gallium arsenide

Femtosecond phenomena

Interferometry

Photon counting

Quantum optics

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