Effect of modulation p-doping on the differential carrier lifetime of quantum dot lasers

Kejia Zhou; Siming Chen; David T. D. Childs; Richard A. Hogg

doi:10.1117/12.908544

8 February 2012 Effect of modulation p-doping on the differential carrier lifetime of quantum dot lasers

Kejia Zhou, Siming Chen, David T. D. Childs, Richard A. Hogg

Author Affiliations +

Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 827720 (2012) https://doi.org/10.1117/12.908544
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We report on spectrally resolved differential carrier lifetime measurements of un-doped and modulation p-doped 1300nm quantum dot laser. We find that the differential carrier lifetime is significantly reduced for p-doped samples compared to essentially identical un-doped samples in line with enhanced Auger recombination. With increasing temperature the results from the un-doped sample are unchanged, whilst an increase in differential carrier lifetime is observed for the pdoped sample. This is in agreement with the Auger rate reducing with increasing temperature. The effect of modulation p-doping on inter-level scattering times and the recombination rate of the excited state are discussed.

Citation Download Citation

Kejia Zhou, Siming Chen, David T. D. Childs, and Richard A. Hogg "Effect of modulation p-doping on the differential carrier lifetime of quantum dot lasers", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827720 (8 February 2012); https://doi.org/10.1117/12.908544

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