The effect of growth temperature on InAs quantum dots grown by MOCVD

Tianhe Li; Xin Guo; Qi Wang; Pengyu Wang; Zhigang Jia; Xiaomin Ren; Yongqing Huang; Shiwei Cai

doi:10.1117/12.917614

28 November 2011 The effect of growth temperature on InAs quantum dots grown by MOCVD

Tianhe Li, Xin Guo, Qi Wang, Pengyu Wang, Zhigang Jia, Xiaomin Ren, Yongqing Huang, Shiwei Cai

Proceedings Volume 8308, Optoelectronic Materials and Devices VI; 83082B (2011) https://doi.org/10.1117/12.917614
Event: SPIE/OSA/IEEE Asia Communications and Photonics, 2011, Shanghai, China

Abstract

The effect of growth temperature on InAs QDs grown by metal-organic chemical vapor deposition (MOCVD) was investigated in detail. Growth temperature affects InAs QDs in three ways, including the reconstruction mode of new InAs crystal faces, the migration length of adatoms, band gaps of InAs QDs, and the interaction among three aspects was studied. The variation of density, size and wavelength was experimentally demonstrated. The high density of 5.2×10¹⁰cm^-2 was obtained. The room temperature wavelength of InAs/GaAs QDs using GaAs as capping layer reached 1240nm.

Citation Download Citation

Tianhe Li, Xin Guo, Qi Wang, Pengyu Wang, Zhigang Jia, Xiaomin Ren, Yongqing Huang, and Shiwei Cai "The effect of growth temperature on InAs quantum dots grown by MOCVD", Proc. SPIE 8308, Optoelectronic Materials and Devices VI, 83082B (28 November 2011); https://doi.org/10.1117/12.917614

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