The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm

Chris Anderson; Dominic Ashworth; Lorie Mae Baclea-An; Suchit Bhattari; Rikos Chao; Rene Claus; Paul Denham; Ken Goldberg; Andrew Grenville; Gideon Jones; Ryan Miyakawa; Ken Murayama; Hiroki Nakagawa; Senajith Rekawa; Jason Stowers; Patrick Naulleau

doi:10.1117/12.917386

22 March 2012 The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm

Chris Anderson, Dominic Ashworth, Lorie Mae Baclea-An, Suchit Bhattari, Rikos Chao, Rene Claus, Paul Denham, Ken Goldberg, Andrew Grenville, Gideon Jones, Ryan Miyakawa, Ken Murayama, Hiroki Nakagawa, Senajith Rekawa, Jason Stowers, Patrick Naulleau

Author Affiliations +

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 832212 (2012) https://doi.org/10.1117/12.917386
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

EUV exposures at the SEMATECH Berkeley Microfield Exposure Tool have demonstrated patterning down to 15 nm half pitch in a chemically amplified resist at a dose of 30 mJ/cm2. In addition, the sensitivity of two organic chemically amplified EUV resists has been measured at 6.7 nm and 13.5 nm and the sensitivity at 6.7 nm is shown to be a factor of 6 lower than the sensitivity at 13.5 nm. The reduction of the sensitivity of each resist at 6.7 nm relative to the sensitivity at 13.5 is shown to be correlated to a reduction of the mass attenuation coefficients of the elements involved with photoabsorption.

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Chris Anderson, Dominic Ashworth, Lorie Mae Baclea-An, Suchit Bhattari, Rikos Chao, Rene Claus, Paul Denham, Ken Goldberg, Andrew Grenville, Gideon Jones, Ryan Miyakawa, Ken Murayama, Hiroki Nakagawa, Senajith Rekawa, Jason Stowers, and Patrick Naulleau "The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 832212 (22 March 2012); https://doi.org/10.1117/12.917386

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