Paper
1 November 2012 Laser effects on the oscillator strength for the intraband transitions in CdS/SiO2 quantum dots
Adrian Radu
Author Affiliations +
Proceedings Volume 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI; 841123 (2012) https://doi.org/10.1117/12.970485
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2012, 2012, Constanta, Romania
Abstract
II-VI semiconductor nanostructures are particularly interesting due to their potential applications in novel optoelectronic devices. There have been many advances in the field, but relatively little work has been done on II-VI semiconductor low-dimensional systems under non-resonant laser radiation. Although the potential outcomes may be important for designing tunable optical devices, they involve complicated numerical techniques. Dealing with nano-scale problems frequently implies tricky mathematical issues as the non-analytical solutions. In this paper we investigate the effects of the laser field radiation on the electronic subband levels in cylindrical CdS/SiO2 quantum dots. Understanding the laser effects on the oscillator strength for the intraband transitions in CdS/SiO2 quantum dots may be relevant in the quantitative interpretation of the future experimental data related to this kind of structures. Our results prove that laser radiation could be used for tuning the quantum dots optical absorption/emission.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adrian Radu "Laser effects on the oscillator strength for the intraband transitions in CdS/SiO2 quantum dots", Proc. SPIE 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, 841123 (1 November 2012); https://doi.org/10.1117/12.970485
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Cited by 3 scholarly publications.
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KEYWORDS
Electrons

Oscillators

Quantum dots

Semiconductor lasers

Semiconductors

Polarization

Cadmium sulfide

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