Infra Red Imaging Technique For Defect Recognition In III-V Wafers

Jean Pierre Fillard

doi:10.1117/12.943567

1 January 1987 Infra Red Imaging Technique For Defect Recognition In III-V Wafers

Jean Pierre Fillard

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943567
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

Among the various physical approaches of wafer defect characterization, special attention is to be payed to the infra red techniques of inspection. In particular, transmission images and scattering tomography will be emphasized. The former leads to low resolution images attributed to EL2 absorption; this point will be critically reviewed. The latter gives highly resolved images of decorated dislocations. The state of the art in both techniques will be presented and compared.

Citation Download Citation

Jean Pierre Fillard "Infra Red Imaging Technique For Defect Recognition In III-V Wafers", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943567

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