Formation of nanoelectrodes for high temperature single-electron sensors

A. A. Parshintsev; E. S. Soldatov

doi:10.1117/12.2017239

8 January 2013 Formation of nanoelectrodes for high temperature single-electron sensors

A. A. Parshintsev, E. S. Soldatov

Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000B (2013) https://doi.org/10.1117/12.2017239
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation

Abstract

To create a molecular transistor, that is capable to operate in single-electron regime at room temperature, nanogap of several nanometers between electrodes is needed. Such nanogaps can be obtained by electromigration. In this work the technique of the creation of nanowire samples suitable for electromigration is described. Nanowires were formed on a substrate without buffer metallic layer to provide best conditions for electromigration process.

Citation Download Citation

A. A. Parshintsev and E. S. Soldatov "Formation of nanoelectrodes for high temperature single-electron sensors", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000B (8 January 2013); https://doi.org/10.1117/12.2017239

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