Paper
8 January 2013 Fabrication of integrated electrodes of molecular transistor by lithographic techniques and electromigration
A. S. Stepanov, E. S. Soldatov, O. V. Snigirev
Author Affiliations +
Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000C (2013) https://doi.org/10.1117/12.2017106
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation
Abstract
Integrated electrodes of molecular transistor were obtained. Electrodes includes thin-film Au strips with a 2 - 3 nm gap between them and Al gate electrode covered by Al2O3 oxide. The gap formation were made by electromigration technique and self-breaking process. Small (3 - 5 nm) gold nanoparticle were placed into the gap by self assembling. IV curves were measured at room temperature. These IV curves demonstrated single-electron conductivity of system. Such integrated system of electrodes is suitable to be the source-drain electrodes of planar single-electron transistors based on nano-particles or molecules.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. S. Stepanov, E. S. Soldatov, and O. V. Snigirev "Fabrication of integrated electrodes of molecular transistor by lithographic techniques and electromigration", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000C (8 January 2013); https://doi.org/10.1117/12.2017106
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Electrodes

Gold

Transistors

Aluminum

Lithography

System integration

Thin films

Back to Top